K2399 Field Effect Transistor

Toshiba Semiconductor

Description

2SK2399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2 *π *MOSV) 2SK2399 Chopper Regulator, DC *DC Converter and.

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Datasheet Specifications

Part number: K2399
Manufacturer: Toshiba ↗ Semiconductor
File Size: 266.80 KB
Datasheet: K2399-ToshibaSemiconductor.pdf
Description: Field Effect Transistor

Applications

* Unit: mm l 4 V gate drive l Low drain
* source ON resistance : RDS (ON) = 0.17 Ω (typ. ) l High forward transfer admittance : |Yfs| = 4.5 S (typ. ) l Low leakage current : IDSS = 100 µA (max) (VDS = 100 V) l Enhancement
* mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratin

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K2399 Field Effect Transistor Toshiba Semiconductor

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