K2398 Field Effect Transistor

Toshiba

Description

2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSV) 2SK2398 DC *DC Converter and Motor Drive Applications Uni.

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Datasheet Specifications

Part number: K2398
Manufacturer: Toshiba ↗
File Size: 317.76 KB
Datasheet: K2398-Toshiba.pdf
Description: Field Effect Transistor

Applications

* Unit: mm l Low drain
* source ON resistance : RDS (ON) = 22 mΩ (typ. ) l High forward transfer admittance : |Yfs| = 27 S (typ. ) l Low leakage current : IDSS = 100 µA (max) (VDS = 60 V) l Enhancement
* mode : Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Char

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