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K13A25D Datasheet - Toshiba Semiconductor

K13A25D TK13A25D

K13A25D Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK13A25D TO-220SIS 1: Gate (G) 2: Drain (D) 3: Source (S) 1 2011-10-10 Rev.2.0

K13A25D-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

K13A25D

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

228.23 KB

Description:

Tk13a25d.

K13A25D Distributor

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K13A25D K13A25D TK13A25D Toshiba Semiconductor