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K13A50D TK13A50D

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Description

TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK13A50D Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm .

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Features

* es, withou

Applications

* Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 0.69 ± 0.15 Ф0.2 M A
* Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ. ) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ. ) Low leakage current: IDSS = 10 μA

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K13A50D TK13A50D Toshiba
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