Datasheet Details
- Part number
- K12A60U
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 206.69 KB
- Datasheet
- K12A60U_ToshibaSemiconductor.pdf
- Description
- TK12A60U
K12A60U Description
www.DataSheet4U.com TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ) TK12A60U Switching Regulator Applications .
K12A60U Features
* equipment used in nuclear facilities, equipment used in the aerospace indu
K12A60U Applications
* Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ. ) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ. ) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (
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