Datasheet Details
- Part number
- K12A50D
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 247.01 KB
- Datasheet
- K12A50D_ToshibaSemiconductor.pdf
- Description
- TK12A50D
K12A50D Description
TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A50D Switching Regulator Applications * * * .
K12A50D Applications
* Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ. ) High forward transfer admittance: |Yfs| = 6.0 S (typ. ) Low leakage current: IDSS = 10 μA (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta
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