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K12A60D - TK12A60D

K12A60D Description

TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A60D Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm .

K12A60D Features

* ment used

K12A60D Applications

* Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 0.69 ± 0.15 Ф0.2 M A
* Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ. ) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ. ) Low leakage current: IDSS = 10 μA

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TK12A60D Toshiba Semiconductor
Toshiba Semiconductor K12A60D-like datasheet

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