2SK2602 Datasheet (Toshiba Semiconductor)

2SK2602, Silicon N-Channel MOSFET

2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2602 Switching Regulator Applications z Low drain source ON-resistance : RDS (ON) = 0.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 5.5 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain source voltage Drain

2SK2602 Features

* representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assume