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isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤3.78Ω(TYP) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION · Efficient and reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
900
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
3
IDM
Drain Current-Single Pulsed
9
PD
Total Dissipation @TC=25℃
100
Tj
Max.
2SK2608 Datasheet
