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2SK2611 - N-Channel MOSFET

General Description

Drain Current ID=9A@ TC=25℃ Drain Source Voltage- : VDSS= 900V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS low on

resistance.

High speed switching.

No secondary breakdow

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·low on–resistance. ·High speed switching. ·No secondary breakdown. ·Suitable for switchingregulator, DC–DC control. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 9 A IDM Drain Current-Single Plused 27 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max.