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2SK2611 - N-Channel Power MOSFET

General Description

The Nell 2SK2611 is a three-terminal silicon device with current conduction capability of 9A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max.

threshold voltage of 4 volts.

Key Features

  • RDS(ON) = 1.10Ω @ VGS = 10V Ultra low gate charge(58nC typical) Low reverse transfer capacitance (CRSS = 45pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D (Drain) G (Gate) S (Source).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR 2SK2611 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (9A, 900Volts) DESCRIPTION The Nell 2SK2611 is a three-terminal silicon device with current conduction capability of 9A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits, UPS, relay drive and general purpose switching applications. D G D S TO-3PB FEATURES RDS(ON) = 1.