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2SK2606
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2606
DC−DC Converter, Relay Drive and Motor Drive Applications
Unit: mm
z Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance : |Yfs|= 7.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode : Vth = 2.0 to 4.
2SK2606 Datasheet
