2SC3668 Datasheet (Toshiba Semiconductor) - Silicon NPN Epitaxial Type TRANSISTOR

2SC3668, Silicon NPN Epitaxial Type TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3668 Power Amplifier Applications Power Switching Applications 2SC3668 Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 1000 mW High-speed switching: tstg = 1.0 μ (typ.) Complementary to 2SA1428.

Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage V

2SC3668 Features

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