2SC3601 - PNP / NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SC3601
Manufacturer	Sanyo Semicon Device
File Size	48.35 KB
Description	PNP / NPN Epitaxial Planar Silicon Transistors
Datasheet	2SC3601_SanyoSemiconDevice.pdf

High fT : fT typ=400MHz. High breakdown voltage : VCEO≥200V. Small reverce transfer capacitance and excellent high frequency characteristics : Cre=2.0pF(NPN), 2.5pF(PNP). Complementary PNP and NPN types. Adoption of FBET process. Specifications ( ) : 2SA1407 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipatio.

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Published: Mar 22, 2005 |