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2SC3661 - NPN Transistor

Features

  • Very small-sized package permitting 2SC3661-used sets to be made smaller, slimmer.
  • Adoption of FBET process.
  • High DC current gain (hFE=800 to 3200).
  • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
  • High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storag.

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Full PDF Text Transcription

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Ordering number:EN1854A NPN Epitaxial Planar Silicon Transistor 2SC3661 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · Low frequency general-purpose amplifiers, drivers, muting circuit. Features · Very small-sized package permitting 2SC3661-used sets to be made smaller, slimmer. · Adoption of FBET process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V).
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