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2SC3113 Datasheet - Toshiba Semiconductor

2SC3113 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3113 2SC3113 For Audio Amplifier and Switching Applications Unit: mm High DC current gain: hFE = 600~3600 High breakdown voltage: VCEO = 50 V High collector current: IC = 150 mA (max) Small package Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Sy.

2SC3113 Datasheet (140.21 KB)

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Datasheet Details

Part number:

2SC3113

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

140.21 KB

Description:

Silicon npn transistor.

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2SC3113 Silicon NPN Transistor Toshiba Semiconductor

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