2SC3114 - PNP/NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SC3114
Manufacturer	Sanyo Semicon Device
File Size	71.86 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SC3114_SanyoSemiconDevice.pdf

High VEBO.
Wide ASO and highly resistant to breakdown. Package Dimensions unit:mm 2003B [2SA1246/2SC3114] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3 5.0 ( ) : 2SA1246 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1.3 1.3.

📁 2SC3114 Similar Datasheet

2SC3110 - Silicon Power Transistor (Inchange)
2SC3112 - TRANSISTOR (Toshiba Semiconductor)
2SC3113 - Silicon NPN Transistor (Toshiba Semiconductor)
2SC3119 - Silicon NPN Transistor (Toshiba)
2SC3101 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)
2SC3102 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)
2SC3103 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)
2SC3104 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)

Other Datasheets by Sanyo Semicon Device

Published: Mar 22, 2005 |