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2SC3112 Datasheet - Toshiba Semiconductor

2SC3112 TRANSISTOR

2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3112 For Audio Amplifier and Switching Applications High DC current gain: hFE = 600~3600 High breakdown voltage: VCEO = 50 V High collector current: IC = 150 mA (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperatur.

2SC3112 Datasheet (487.09 KB)

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Datasheet Details

Part number:

2SC3112

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

487.09 KB

Description:

Transistor.

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2SC3112 TRANSISTOR Toshiba Semiconductor

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