1SS385F Datasheet - Toshiba Semiconductor

1SS385F, Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching 1SS385F Unit in mm Low forward voltage: VF = 0.23V (typ.) @IF = 5.

Applications

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1SS385F_ToshibaSemiconductor.pdf