1SS385 Datasheet - Toshiba Semiconductor

1SS385, Silicon diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching 1SS385 Unit: mm z Low forward voltage: VF (2) = 0.23V (typ.) @IF =.

Applications

* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel

1SS385_ToshibaSemiconductor.pdf