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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS383
1SS383
Low Voltage High Speed Switching
Small package Composed of 2 independent diodes. Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5μA (max)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation
VRM VR IFM IO IFSM P
45 40 300 * 100 * 1* 100 *
V V mA mA A mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55 to 125
°C
JEDEC
―
Operating temperature range
Topr
−40 to 100
°C
JEITA
TOSHIBA
― 1-2U1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.006g (typ.
1SS383 Datasheet
