1SS383 Datasheet - Toshiba Semiconductor

1SS383, Silicon diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 1SS383 Low Voltage High Speed Switching * Small package * Composed of 2 indepen.

Applications

* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel

1SS383_ToshibaSemiconductor.pdf