1SS315 Datasheet - Toshiba Semiconductor

1SS315, Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS315 UHF Band Mixer Applications 1SS315 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Chara.

Applications

* 1SS315 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage Forward current Junction temperature Storage temperature range VRM IF Tj Tstg 5 V 30 mA 125 °C
* 55 to 125 °C Note: Using continuously under heavy loads (e. g

1SS315_ToshibaSemiconductor.pdf