1SS311 Datasheet - Toshiba Semiconductor

1SS311, Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 1SS311 High Voltage,High Speed Switching Applications z Low forward voltage : VF = 0.94V (typ.).

Applications

* z Low forward voltage : VF = 0.94V (typ. ) z High voltage : VR = 400V (min) z Fast reverse recovery time : trr = 1.5ns (typ. ) z Small total capacitance : CT = 3.2pF (typ. ) z Small package : SC
* 59 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Ma

1SS311_ToshibaSemiconductor.pdf