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TDG650E602TSP - Space GaN E-mode Transistor

Teledyne

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Datasheet Details

Part number	TDG650E602TSP
Manufacturer	Teledyne
File Size	1.61 MB
Description	Space GaN E-mode Transistor
Datasheet	TDG650E602TSP-Teledyne.pdf

TDG650E602TSP Product details

Description

The TDG650E602TSP is a space-grade, 650 V, enhancement mode, GaN-on-Silicon power transistor.

Features

Class one / Level one Production Screening.
Lot Acceptance Test options available.
650 V enhancement mode power transistor.
Top-cooled, low inductance GaNPX® package.
RDS(on) = 25 mΩ.
IDS(max) = 60 A.
Ultra-low FOM.
Simple gate drive requirements (0 V to 6 V).
Transient tolerant gate drive (-20 V / +10 V).
Very high switching frequency ( > 10 MHz).
Fast and controllable fall and rise times.

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Published: Aug 9, 2023 |