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TDG650E602TSP - Space GaN E-mode Transistor

Description

The TDG650E602TSP is a space-grade, 650 V, enhancement mode, GaN-on-Silicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

Features

  • Class one / Level one Production Screening.
  • Lot Acceptance Test options available.
  • 650 V enhancement mode power transistor.
  • Top-cooled, low inductance GaNPX® package.
  • RDS(on) = 25 mΩ.
  • IDS(max) = 60 A.
  • Ultra-low FOM.
  • Simple gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 V / +10 V).
  • Very high switching frequency ( > 10 MHz).
  • Fast and controllable fall and rise times.

📥 Download Datasheet

Datasheet Details

Part number TDG650E602TSP
Manufacturer Teledyne
File Size 1.61 MB
Description Space GaN E-mode Transistor
Datasheet download datasheet TDG650E602TSP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TDG650E602TSP Space GaN E-mode Transistor Product Specficaton Features • Class one / Level one Production Screening • Lot Acceptance Test options available • 650 V enhancement mode power transistor • Top-cooled, low inductance GaNPX® package • RDS(on) = 25 mΩ • IDS(max) = 60 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • Very high switching frequency ( > 10 MHz) • Fast and controllable fall and rise times • Reverse conduction capability • Zero reverse recovery loss • Small 9 x 7.6 mm2 PCB footprint • Dual gate pads for optimal board layout Package Outline top view Circuit Symbol The thermal pad is internally connected to pin 3 and substrate.
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