TDG100E90BEP Datasheet (Teledyne) - 100V E-mode GaN transistor

TDG100E90BEP, 100V E-mode GaN transistor

The TDG100E90BEP is an enhancement mode GaN-on-silicon power transistor based on GaN Systems Technology.

The properties of GaN ensure high current, high voltage breakdown combined with high switching frequency.

GaN Systems implements patented Island Technology® cell layout for high-current performan

TDG100E90BEP Features

* 100 V enhancement mode GaN power switch

* Bottom-side cooled configuration

* RDS(on) = 7 mΩ

* IDS(max) = 90 A

* Ultra-low FOM Island Technology® die

* Low inductance GaNPX® package

* Easy gate drive requirements (0 V to 6 V)

* Transie