Datasheet4U Logo Datasheet4U.com

TSF20H150C Trench MOS Barrier Schottky Rectifier

📥 Download Datasheet  Datasheet Preview Page 1

Description

TSF20H100C thru TSF20H150C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier .
RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.

📥 Download Datasheet

Preview of TSF20H150C PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Specifications

Part number
TSF20H150C
Manufacturer
Taiwan Semiconductor
File Size
225.29 KB
Datasheet
TSF20H150C_TaiwanSemiconductor.pdf
Description
Trench MOS Barrier Schottky Rectifier

Features

* - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ITO-220AB MECHANICAL DATA Case : ITO-220A

TSF20H150C Distributors

📁 Related Datasheet

📌 All Tags

Taiwan Semiconductor TSF20H150C-like datasheet