TSF20H150C Trench MOS Barrier Schottky Rectifier

Taiwan Semiconductor

TSF20H150C Description

TSF20H100C thru TSF20H150C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier .
RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.

TSF20H150C Features

* - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ITO-220AB MECHANICAL DATA Case : ITO-220A

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TSF20H150C Datasheet Preview — Preview of TSF20H150C PDF

Datasheet Details

Part number: TSF20H150C
Manufacturer: Taiwan Semiconductor
File Size: 225.29 KB
Datasheet: TSF20H150C_TaiwanSemiconductor.pdf
Description: Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier Taiwan Semiconductor

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