TSF2080C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Taiwan Semiconductor

Description

creat by ART TSF2080C Taiwan Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier .
RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.

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Datasheet Specifications

Part number: TSF2080C
Manufacturer: Taiwan Semiconductor
File Size: 186.07 KB
Datasheet: TSF2080C-TaiwanSemiconductor.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21

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TSF2080C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Taiwan Semiconductor

Taiwan Semiconductor TSF2080C-like datasheet