TSF20H120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Taiwan Semiconductor

Description

creat by ART TSF20H120C Taiwan Semiconductor .
RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.

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Datasheet Specifications

Part number: TSF20H120C
Manufacturer: Taiwan Semiconductor
File Size: 202.14 KB
Datasheet: TSF20H120C_TaiwanSemiconductor.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to W

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TSF20H120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Taiwan Semiconductor

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