TSF20H120C, TSF20H150C Trench MOS Barrier Schottky Rectifier

Taiwan Semiconductor

Description

TSF20H100C thru TSF20H150C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier .
RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.

📥 Download Datasheet

TSF20H120C Datasheet Preview — This datasheet PDF includes multiple part numbers: TSF20H120C, TSF20H150C. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: TSF20H120C, TSF20H150C
Manufacturer: Taiwan Semiconductor
File Size: 225.29 KB
Datasheet: TSF20H150C_TaiwanSemiconductor.pdf
Description: Trench MOS Barrier Schottky Rectifier
Note: This datasheet PDF includes multiple part numbers: TSF20H120C, TSF20H150C.
Please refer to the document for exact specifications by model.

Features

* - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ITO-220AB MECHANICAL DATA Case : ITO-220A

TSF20H120C Distributors

📁 Related Datasheet

TSF204D00-S1 TSF20L100C TSF20N50M TSF20N60MR TSF20N60S TSF20N65S

📌 All Tags

TSF20H150C Trench MOS Barrier Schottky Rectifier Taiwan Semiconductor

Taiwan Semiconductor TSF20H120C-like datasheet