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D2015UK - RF Silicon Mosfet

Datasheet Summary

Description

Single-Ended RF Silicon Mosfet.

Source Breakdown Voltage BVGSS Gate Source Breakdown Voltage ID (sat) Drain Current Tstg Storage Temperature Tj Maximum Ope

Features

  • Simplified Amplifier Design.
  • Suitable for Broad Band.

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Datasheet preview – D2015UK

Datasheet Details

Part number D2015UK
Manufacturer TT
File Size 275.28 KB
Description RF Silicon Mosfet
Datasheet download datasheet D2015UK Datasheet
Additional preview pages of the D2015UK datasheet.

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Full PDF Text Transcription

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RF Silicon Mosfet 5W 500MHz 28V Single-Ended D2015UK Features: • Simplified Amplifier Design • Suitable for Broad Band Applications • Low Crss • Simple Bias Circuits • Low Noise • High Gain – 13dB Minimum • RoHS Compliant Description: Single-Ended RF Silicon Mosfet. 5W at 500MHz, 28V Absolute Maximum Ratings (TA = 25°C unless otherwise noted) PD Power Dissipation BVDSS Drain – Source Breakdown Voltage BVGSS Gate – Source Breakdown Voltage ID (sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction Temperature Thermal Properties SYMBOL PARAMETER RθJC Thermal Resistance, Junction to Case 29W 65V +20V 2A -65 to +150°C 200°C MAX UNITS 6.
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