Datasheet4U Logo Datasheet4U.com

D2012 NPN Silicon Power Transistor

D2012 Description

® 2SD2012 NPN SILICON POWER TRANSISTOR s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS s GENERAL.
The 2SD2012 is a silicon NPN power transistor housed in TO-220F insulated package.

📥 Download Datasheet

Preview of D2012 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • D2012UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2010UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2011UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2013UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2014UK - RF SILICON FET (Seme LAB)
  • D2015UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2016 - 2SD2016 (Allegro)
  • D2016UK - METAL GATE RF SILICON FET (Seme LAB)

📌 All Tags

STMicroelectronics D2012-like datasheet