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D2011UK, D20 METAL GATE RF SILICON FET

D2011UK Description

TetraFET D2011UK METAL GATE RF SILICON FET MECHANICAL DATA C D B E 8 1 7 6 3 4 2 A F 5 Q O N M J K L GOLD METALLISED MULTI-PURPOSE SILICON DMOS R.

D2011UK Features

* I P H G DBC1 Package PIN 1 Source PIN 2 Drain PIN 3 Drain PIN 4 Source DIM A B C D E F G H I J K L M N O P Q mm 6.47 0.76 45° 0.76 1.14 2.67 11.73 8.43 7.92 0.20 0.64 0.30 3.25 2.11 6.35SQ 1.65 0.13 PIN 5 Source PIN 6 Gate PIN 7 Gate PIN 8 Source Tol. 0.08 0.08 5° 0.08 0.08 0.08 0.13 0.08 0.08 0.

D2011UK Applications

* LOW Crss
* LOW NOISE
* HIGH GAIN APPLICATIONS
* HF/VHF/UHF COMMUNICATIONS from 1 MHz to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain
* Source Breakdown Voltage Gat

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: D2011UK, D20. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
D2011UK, D20
Manufacturer
Seme LAB
File Size
22.11 KB
Datasheet
D20-11.pdf
Description
METAL GATE RF SILICON FET
Note
This datasheet PDF includes multiple part numbers: D2011UK, D20.
Please refer to the document for exact specifications by model.

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METAL GATE SILICON FET Seme LAB
Seme LAB D2011UK-like datasheet