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RF Silicon Mosfet
2.5W 500MHz 28V Single-Ended
D2014UK
Features:
• Simplified Amplifier Design • Suitable for Broad Band Applications • Low Crss • Simple Bias Circuits • Low Noise • High Gain – 13dB Minimum • RoHS Compliant
Description:
Single-Ended RF Silicon Mosfet. 2.5W at 500MHz, 28V
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
PD
Power Dissipation
BVDSS
Drain – Source Breakdown Voltage
BVGSS
Gate – Source Breakdown Voltage
ID (sat)
Drain Current
Tstg
Storage Temperature
Tj
Maximum Operating Junction Temperature
Thermal Properties
SYMBOL
PARAMETER
RθJC
Thermal Resistance, Junction to Case
17.5W 65V
+20V
1A -65 to +150°C
200°C
MAX
UNITS
10.
D2014UK Datasheet
