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MMBT5551LT1 - NPN Transistor

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Part number MMBT5551LT1
Manufacturer TGS
File Size 28.24 KB
Description NPN Transistor
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Description

The MMBT5551LT1 is designed for general purpose applications requiring high Breakdown Voltages. Maximum Temperatures Storage Temperature-55+150°C Junction Temperature +150°C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage.

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