MMBT2222ALT1 - NPN EPITAXIAL PLANAR TRANSISTOR

Product Overview

TGS

Part number	MMBT2222ALT1
Manufacturer	TGS
File Size	29.63 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	MMBT2222ALT1 Datasheet
Additional preview pages of the MMBT2222ALT1 datasheet.

The MMBT2222ALT1 is designed for general purpose amplifier and high-speed switching, medium-power switching applications.

High frequency current gain.
High Speed Switching. Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55~+150°C Junction Temperature+150°C.
Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW.
Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 75 V VCEO Collector to Emitter Voltage 40 V VEBO Emitter to Base Voltage 6 V IC Collector Current 600 mA Characteristics (Ta=25°C) Symbol Min. Typ.

📁 Similar Datasheet

MMBT2222AL - NPN GENERAL PURPOSE AMPLIFIER (UTC)
MMBT2222ALP4 - NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR (Diodes)
MMBT2222A - NPN Amplifier (GME)
MMBT2222A-G - Small Signal Transistor (Comchip Technology)
MMBT2222AG - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
MMBT2222AM-C - NPN Transistor (SeCoS)
MMBT2222AM3T5G - NPN General Purpose Transistor (ON Semiconductor)
MMBT2222AT - NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR (Diodes Incorporated)

Other Datasheets by TGS

Published: Oct 26, 2025 |