MMBT5401LT1 - PNP Transistor

Product Overview

TGS

Part number	MMBT5401LT1
Manufacturer	TGS
File Size	27.44 KB
Description	PNP Transistor
Datasheet	MMBT5401LT1 Datasheet
Additional preview pages of the MMBT5401LT1 datasheet.

The MMBT5401LT1 is designed for general purpose applications requiring high breakdown voltages.

High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA).
Complements to NPN Type MMBT5551LT1. Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55~+150 °C Junction Temperature +150°C Maximum.
Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW.
Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 160 V VCEO Collector to Emitter Voltage 150 V VEBO Emitter to Base Voltage 5 V IC Collector.

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Published: Aug 25, 2016 |