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MMBT8099 - SMD General Purpose Transistor

Description

MMBT8099 Unit Conditions VCBO VCEO VEBO IC Marking Code Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current KB 80 V 80 V 6.0 V 0.5 A Ptot RθJA Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) 225 mW TA=25 ˚C 1.8 mW/° C Derat

Features

  • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier.

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Datasheet Details

Part number MMBT8099
Manufacturer TAITRON
File Size 173.93 KB
Description SMD General Purpose Transistor
Datasheet download datasheet MMBT8099 Datasheet

Full PDF Text Transcription

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SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD General Purpose Transistor (NPN) MMBT8099 SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT8099 Unit Conditions VCBO VCEO VEBO IC Marking Code Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current KB 80 V 80 V 6.0 V 0.5 A Ptot RθJA Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) 225 mW TA=25 ˚C 1.8 mW/° C Derate above 25 ˚C 556 ° C /W Ptot Power Dissipation (Note 2) 300 mW TA=25 ˚C 2.
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