Datasheet4U Logo Datasheet4U.com

2N7002E - MOSFET

Description

Drain-Source Voltage Drain-Gate Voltage (RGS ≤1MΩ) Gate-Source Voltage Continuous Gate-Source Voltage Non Repetitive (tp

Features

  • High density cell design for low RDS(ON).
  • Voltage controlled small signal switch.
  • Rugged and reliable.
  • High saturation current capability.
  • RoHS Compliance, Halogen Free SOT-23 Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings @ TA=25°C unless noted otherwise Symbol VDSS VDGR VGSS ID IDP.

📥 Download Datasheet

Datasheet Details

Part number 2N7002E
Manufacturer TAITRON
File Size 360.24 KB
Description MOSFET
Datasheet download datasheet 2N7002E Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N7002E N-channel MOSFET Vishay
2N7002E Small Signal MOSFET ON Semiconductor
2N7002E N-Channel MOSFET LITE-ON
2N7002E N-channel MOSFET Diodes Incorporated
2N7002E N-channel TrenchMOS FET NXP

Other Datasheets by TAITRON

Part Number Description
2N7002KDWS Double N-Channel MOSFET
2N7000 N-Channel MOSFET
2N7000K N-channel MOSFET

Full PDF Text Transcription

Click to expand full text
Enhancement Mode MOSFET (N-Channel) 2N7002E Enhancement Mode MOSFET (N-Channel) Features • High density cell design for low RDS(ON). • Voltage controlled small signal switch • Rugged and reliable • High saturation current capability • RoHS Compliance, Halogen Free SOT-23 Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.
Published: |