2N7002KDWS
Features
- Advanced Trench Process Technology
- High density cell design for low RDS(ON)
- Very low leakage current in off condition
- ESD Protected 2000V HBM
- Ro HS pliance
SOT-363
Mechanical Data
Case: Terminals:
Weight:
SOT-363, Plastic Package Solderable per MIL-STD-750, Method 2026 0.006 gram
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
VDSS VGSS
ID IDP
TJ TSTG ESD
Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Drain Current Pulsed
Drain Power Dissipation
Junction Temperature Storage Temperature Range Gate-Source ESD Rating
TA=25°C TA=75°C
60 ±20 115 800 200 120 +150 -55 to +150 2000
Unit
V V m A m A m W m W °C °C V
TAITRON PONENTS INCORPORATED .taitronponents.
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Rev. A/CW Page 1 of 8
Enhancement Mode MOSFET (Double N-Channel)
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Off Characteristics...
