Description
2N6383 2N6648
2N6384 2N6649
VCBO
Collector-Base Voltage
40 60
VCEO
Collector-Emitter Voltage
40
60
VEBO
Emitter-Base Voltage
5
Collector Current (Continuous)
IC
Collector Current (Peak)
10 15
IB PD
RθJC TJ, TSTG
Base Current
Total Power Dissipation at TC=25°C
Derate above TA=25°C
Thermal Resistance from Junction to Case Operating Junction and Storage Temperature Range
0.25 100 0.571 1.75 -65 to +200
TO-3
2N6385 2N6650
80
80
Unit V V V
A
A W W/°C °C /W °C
TAITRON COMPONENTS I
Features
- High Gain Dalington Performance.
- DC Current Gain hFE = 3000(Typ) @ IC = 5.0A.
- True Complementary Specifications.
- RoHS Compliant
Mechanical Data
Case: Terminals:
Weight:
TO-3, Metal Can Package Solderable per MIL-STD-750 20 grams (approx)
Maximum Ratings (TC=25ºC unless noted otherwise)
Symbol.