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2N6609 - COMPLEMENTARY POWER TRANSISTORS

ON Semiconductor

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Datasheet Details

Part number	2N6609
Manufacturer	ON Semiconductor
File Size	99.52 KB
Description	COMPLEMENTARY POWER TRANSISTORS
Datasheet	2N6609_ONSemiconductor.pdf

2N6609 Product details

Features

http://onsemi. com.
Pb.
Free Packages are Available.
High Safe Operating Area (100% Tested) 150 W @ 100 V Completely Characterized for Linear Operation High DC Current Gain and Low Saturation Voltage hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A For Low Distortion Complementary Designs 16 A.

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Published: Mar 22, 2005 |