2N6603 Datasheet (Motorola) - HIGH FREQUENCY TRANSISTOR

2N6603, HIGH FREQUENCY TRANSISTOR

2N6603 JAN, JTX, JTXV AVAILABLE CASE 303-01, STYLE 1 HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS (Ta = 25°C Free Air Temperature) Rating Symbol Value Collector-Emitter Voltage vCEO 15 Collector-Base Voltage VCBO 25 Emitter-Base Voltage Collector Current Continuous @Total Device Dissipation Tq = 125°C Derate above 125°C VEBO 'c PD 3.0 30 400 5.33 Storage Temperature Tstg - 65 to + 200 Unit Vdc Vdc Vdc mAdc mW mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unl