2N669 Datasheet (Motorola) - PNP germanium power transistors

2N669, PNP germanium power transistors

176 2N (GERMANIUM) 2N669 CASE 11 (TO-3) PNP germanium power transistors for economical power switching circuits and commercial grade power amplifier applications.

MAXIMUM RATINGS Rating Collector- Base Voltage Collector-Emitter Voltage Collector Current (Continuous) Storage and Junction Temperature Total Device Dissipation (At 25'C Case Temperature) Thermal Resistance (Junction to Case) Symbol VCB VCES IC TJ, Tstg PD BJC Value 40 30 3.0 -65 to +100 90 0.8 Unit Vdc Vdc Amp 'c Watts 'C/W