SSW408, SSW-408 Datasheet - Stanford Microdevices

SSW408, SSW-408, DC-4 GHz High Power GaAs MMIC SPDT Switch

Preliminary Preliminary Preliminary Product Description Stanford Microdevices’ SSW-408 is a high performance Gallium Arsenide Field Effect Transistor

Features

* High Compression Point : up to 4 Watts
* HIgh Linearity : TOIP +55dBm @2GHz
* Low DC Power Consumption
* Low Insertion Loss : 1.2dB at 2GHz
* Operates from Positive or Negative 3V to 8V Supplies
* Low Cost Small Outline Plastic Package -20 dB -30

Applications

* Analog/Digital Wireless Communications
* Spread Spectrum
* AMPS, PCS, DECT, IS-95, IS-136, 802.11, CDPD and GSM. Electrical Specifications at Ta = 25C Symbol Parameters & Test C onditions: Zo = 50 ohms v = +5 or -5V Inserti on Loss Ins Isolati on Isol Input & Output VSWR (

SSW-408_StanfordMicrodevices.pdf