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SSW1N60A Datasheet - Fairchild Semiconductor

SSW1N60A, Advanced Power MOSFET

Advanced Power MOSFET
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Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 600V Low RDS(ON) : 9.390 Ω (Typ. ) SSW/I1N60A BVDSS = 600 V RDS(on) = 12 Ω ID = 1 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2.

SSW1N60A_FairchildSemiconductor.pdf

Preview of SSW1N60A PDF

Datasheet Details

Part number:

SSW1N60A

Manufacturer:

Fairchild Semiconductor

File Size:

628.95 KB

Description:

Advanced power mosfet.

SSW1N60A Distributors

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