SSW2N80A Datasheet - Fairchild Semiconductor

SSW2N80A, Advanced Power MOSFET

www.DataSheet4U.com Advanced Power MOSFET

Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 800V Low RDS(ON) : 4.688 Ω (Typ. ) SSW/I2N80A BVDSS = 800 V RDS(on) = 6.0 Ω ID = 2 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2.

SSW2N80A_FairchildSemiconductor.pdf