SSW2N80A - Advanced Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	SSW2N80A
Manufacturer	Fairchild Semiconductor
File Size	290.05 KB
Description	Advanced Power MOSFET
Datasheet	SSW2N80A_FairchildSemiconductor.pdf

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 800V Low RDS(ON) : 4.688 Ω (Typ. ) SSW/I2N80A BVDSS = 800 V RDS(on) = 6.0 Ω ID = 2 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (.

📁 SSW2N80A Similar Datasheet

SSW208 - DC-4 GHz High Isolation GaAs MMIC SPDT Switch (Stanford Microdevices)
SSW224 - DC-6 GHZ HIGH ISOLATION SPDT GAAS MMIC SWITCH (Stanford Microdevices)
SSW-104-01-T-S - Socket Strip (Samtec)
SSW-108 - DC-4 GHz High Isolation GaAs MMIC SPDT Switch (Stanford Microdevices)
SSW-124 - DC-6 GHz High Isolation SPDT GaAs MMIC Switch (Stanford Microdevices)
SSW-1xx-xx-F-x - Socket Strip (Samtec)
SSW-1xx-xx-G-x - Socket Strip (Samtec)
SSW-1xx-xx-S-x - Socket Strip (Samtec)

Other Datasheets by Fairchild Semiconductor

Published: Jan 11, 2007 |