SSW1N50B - 520V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	SSW1N50B
Manufacturer	Fairchild Semiconductor
File Size	600.21 KB
Description	520V N-Channel MOSFET
Datasheet	SSW1N50B_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

1.5A, 520V, RDS(on) = 5.3Ω @VGS = 10 V Low gate charge ( typical 8.3 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
◀ ▲.
G S D2-PAK SSW Series G D S I2-PAK SSI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Contin.

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Published: Jan 3, 2006 |