SSD3030N Datasheet - South Sea Semiconductor

SSD3030N, N-Channel MOSFET

SSD3030N N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (m ) Max D TO-252 17 @VGS = 10V 30V 30A 35 @VGS = 4.5V G S D FEA

Features

* Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb Free. S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit 30 + - 2

SSD3030N-SouthSeaSemiconductor.pdf