SSD30N10J Datasheet - SeCoS

SSD30N10J, N-Channel MOSFET

Elektronische Bauelemente SSD30N10J 30A, 100V, RDS(ON) 31mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies hal

Features

* High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation A B C D GE MARKING CJU30N10 = Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inc

SSD30N10J-SeCoS.pdf