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Elektronische Bauelemente
SSD30N10J
30A, 100V, RDS(ON) 31mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
SSD30N10J is designed to stand high energy in the avalanche mode and switch efficiently. It also offers a drain-to-source diode fast recovery time. It is designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
TO-252(D-Pack)
FEATURES
High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation
A
B
C
D
GE
MARKING
CJU30N10
= Date Code
PACKAGE INFORMATION
Package
MPQ
TO-252
2.
SSD30N10J Datasheet
