SSD2030P Datasheet - South Sea Semiconductor

SSD2030P, P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 40 @VGS = - 10V -30V -20A 65 @VGS = - 5V 75 @VGS = - 4.5V G S D SSD

Features

* Super high density cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -30 +

SSD2030P-SouthSeaSemiconductor.pdf